Structure, Barriers, and Relaxation Mechanisms of Kinks in the 90° Partial Dislocation in Silicon
- 19 August 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (8) , 1516-1519
- https://doi.org/10.1103/physrevlett.77.1516
Abstract
Kink defects in the 90° partial dislocation in silicon are studied using a linear-scaling density-matrix technique. The asymmetric core reconstruction plays a crucial role, generating at least four distinct kink species as well as soliton defects. The energies and migration barriers of these entities are calculated and compared with experiment. As a result of certain low-energy kinks, a peculiar alternation of the core reconstruction is predicted. We find the solitons to be remarkably mobile even at very low temperature, and propose that they mediate the kink relaxation dynamics.Keywords
All Related Versions
This publication has 15 references indexed in Scilit:
- Nature of Dislocations in SiliconPhysical Review Letters, 1995
- Atomic modes of dislocation mobility in siliconPhilosophical Magazine A, 1995
- Dislocation Kink Motion in SiliconPhysical Review Letters, 1995
- Ab InitioTheory of Dislocation Interactions: From Close-Range Spontaneous Annihilation to the Long-Range Continuum LimitPhysical Review Letters, 1994
- Transferable tight-binding models for siliconPhysical Review B, 1994
- Ab initio total energy calculations of impurity pinning in siliconPhysica Status Solidi (a), 1993
- Atomic and electronic structures of the 90° partial dislocation in siliconPhysical Review Letters, 1992
- Solitons and the electrical and mobility properties of dislocations in siliconPhilosophical Magazine Part B, 1983
- Hidden structure in liquidsPhysical Review A, 1982
- The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motionPhilosophical Magazine Part B, 1980