Dislocation Kink Motion in Silicon
- 24 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (17) , 3392-3395
- https://doi.org/10.1103/physrevlett.74.3392
Abstract
Ductility is controlled at the atomic level by dislocation kink motion. The migration energy for kinks on the 30° partial dislocation in silicon has been computed ab initio in agreement with experiment. The electronic structure changes from semiconducting to metallic at the saddle-point configuration. Band structure energy controls kink motion, so valence electrons control shearing motions involved with ductility, whereas tensile forces involved in fracture depend on both ion-ion and valence forces. Doping effects on dislocation mobility are explained.Keywords
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