The (photo-) etching of n- and p-type GaP in aqueous hypobromite solutions: a ( photo-) electrochemical study
- 1 March 1989
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 261 (1) , 89-103
- https://doi.org/10.1016/0022-0728(89)87128-1
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: II . Model and DiscussionJournal of the Electrochemical Society, 1985
- The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental ResultsJournal of the Electrochemical Society, 1985
- Growth and dissolution of thin anodic layers on GaAs: A photoelectrochemical studyElectrochimica Acta, 1985
- Deep-ultraviolet induced wet etching of GaAsApplied Physics Letters, 1984
- Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox SystemJournal of the Electrochemical Society, 1984
- Electron energy levels in semiconductor electrochemistryProgress in Surface Science, 1982
- Characterization of vapor grown (001) GaAs1−xPx layers by selective photo-etchingJournal of Crystal Growth, 1975
- Selectively etched diffraction gratings in GaAsApplied Physics Letters, 1974
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965