Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry
- 7 April 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (14) , 1819-1821
- https://doi.org/10.1063/1.118701
Abstract
Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50–500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures.Keywords
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