Variations in the carrier concentration in elemental and compound semiconductors utilizing electrolyte electroreflectance: A topographical investigation

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Abstract
Utilizing electrolyte electroreflectance we have developed a convenient nondestructive room‐temperature technique for evaluating the topographical features of the variations in the carrier concentration across the surface of semiconductors with a spatial resolution of about 100 μm. We report measurements on several element and compound semiconductors including silicon, germanium, GaAs, and InSb. The advantages of this method in relation to other techniques will be discussed.