Initial growth mode of Er silicide on Si(111) by solid phase epitaxy

This publication has 14 references indexed in Scilit:

• Surface reconstruction ofErSi1.7(0001) investigated by scanning tunneling microscopy
  Physical Review B, 1995
• Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)
  Physical Review B, 1994
• Electronic structure of erbium suicide ultra-thin films
  Surface Science, 1993
• The growth of epitaxial Yb silicide: a study with STM
  Surface Science, 1993
• Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111)
  Physical Review B, 1993
• Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor
  Applied Physics Letters, 1992
• Fabrication and structure of epitaxial Er silicide films on (111) Si
  Applied Physics Letters, 1989
• Epitaxial growth of rare-earth silicides on (111) Si
  Applied Physics Letters, 1986
• The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon
  Applied Physics Letters, 1981
• Low Schottky barrier of rare-earth silicide on n-Si
  Applied Physics Letters, 1981