Dependence of the threshold voltage on channel length in BC-mosfet's
- 31 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5) , 397-401
- https://doi.org/10.1016/0038-1101(83)90095-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A gigabit MOS logic circuit with buried channel MOSFETsIEEE Journal of Solid-State Circuits, 1980
- Computer analysis of a short-channel BC MOSFETIEEE Transactions on Electron Devices, 1980
- Space-charge controlled conduction in thick metal-insulator-metal barriersJournal of Applied Physics, 1980
- D.C. and high-frequency characteristics of built-in channel MOS-FETsSolid-State Electronics, 1978
- Physical limitations of MOS structuresSolid-State Electronics, 1969