A study of electron binding at the isoelectronic nitrogen centre in GaP and InGaP
- 21 June 1974
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 7 (12) , L235-L238
- https://doi.org/10.1088/0022-3719/7/12/002
Abstract
A calculation of the electron ground state associated with N in InGaP was performed, with a view to examining the validity of the impurity potential. It was found that the variation of the ground-state energy with composition was adequately described by a model using a screened ionic pseudopotential for the impurity and host. The effect of lattice distortion was also considered, and found to be small, but favourable as far as agreement with experiment was concerned.Keywords
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