Analytical modelling of ultra-thin film depletion-mode SOI MOSFETs
- 31 December 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (12) , 1361-1364
- https://doi.org/10.1016/0038-1101(91)90030-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materialsIEEE Electron Device Letters, 1988
- An Analytical Model of Conductance and Transconductance for Depletion-Mode MOS TransistorsPhysica Status Solidi (a), 1987
- SOI MOSFET in weak inversion and weak accumulationElectronics Letters, 1987
- Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structuresApplied Physics Letters, 1986
- Deep depleted SOI MOSFETs with back potential control: A numerical simulationSolid-State Electronics, 1985