A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results
- 23 January 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (2) , 287-295
- https://doi.org/10.1109/ted.2005.862246
Abstract
A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view, suitable for simulating large circuits. In Part II, a parameter determination procedure is described and demonstrated for a variety of SiGe process technologies.Keywords
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