Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells
- 1 December 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 42 (1-3) , 77-81
- https://doi.org/10.1016/s0921-5107(96)01686-8
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodesJournal of Electronic Materials, 1996
- Bandlike and localized states at extended defects in siliconPhysical Review B, 1995
- Temperature-dependent critical layer thickness for strained-layer heterostructuresApplied Physics Letters, 1995
- Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructuresApplied Physics Letters, 1995
- Polarity determination in (001)-oriented AIII– Bvcompound semiconductors by the Kossel technique and chemical etchingZeitschrift für Kristallographie, 1990
- Evidence for the electron traps at dislocations in GaAs crystalsJournal of Applied Physics, 1989
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersJournal of Applied Physics, 1988
- Ohmic contacts to n-GaAs using low-temperature annealJournal of Applied Physics, 1981
- Recombination at dislocationsSolid-State Electronics, 1978
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977