III-nitride ultraviolet light-emitting diodes with delta doping
- 16 July 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (3) , 566-568
- https://doi.org/10.1063/1.1593212
Abstract
We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing δ doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300×300 bare LED chip measured from the sapphire side reached 50 μW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current.
Keywords
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