Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
- 22 October 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (18) , 3491-3493
- https://doi.org/10.1063/1.1518155
Abstract
We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70 °C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.Keywords
This publication has 13 references indexed in Scilit:
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain managementApplied Physics Letters, 2002
- 324 nm Light Emitting Diodes with Milliwatt PowersJapanese Journal of Applied Physics, 2002
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nmJapanese Journal of Applied Physics, 2002
- Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wellsApplied Physics Letters, 2001
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum WellsJapanese Journal of Applied Physics, 2001
- Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet regionApplied Physics Letters, 2001
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2001
- High-power AlGaInN flip-chip light-emitting diodesApplied Physics Letters, 2001
- Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersApplied Physics Letters, 2000
- Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire SubstrateJapanese Journal of Applied Physics, 2000