Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs
- 31 January 1992
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (1) , 113-115
- https://doi.org/10.1016/0038-1101(92)90312-z
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1986
- Analytical modeling of the stationary domain in GaAs MESFET'sIEEE Transactions on Electron Devices, 1986