Semiconductor wafer bonding via liquid capillarity
- 31 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (5) , 651-653
- https://doi.org/10.1063/1.127074
Abstract
Liquid surface tension has been used to pull different semiconductor wafers to very close contact and strong bonding. Bonded wafers, such as GaAs/GaP, were heat treated without pressure application to achieve wafer fusion. The bonding process has been analyzed, and criteria for surface tension, wafer flatness, and elasticity have been derived.Keywords
This publication has 10 references indexed in Scilit:
- Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devicesJournal of Applied Physics, 1997
- High gain-bandwidth-product silicon heterointerface photodetectorApplied Physics Letters, 1997
- Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)Applied Physics Letters, 1995
- Double-fused 1.52-μm vertical-cavity lasersApplied Physics Letters, 1995
- Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodesApplied Physics Letters, 1994
- Diffusion-bonded stacked GaAs for quasiphase- matched second-harmonic generation of a carbon dioxide laserElectronics Letters, 1993
- Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangementApplied Physics Letters, 1993
- Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substratesApplied Physics Letters, 1990
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990
- Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a MicrocleanroomJapanese Journal of Applied Physics, 1989