Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
- 15 November 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (10) , 4892-4903
- https://doi.org/10.1063/1.366353
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelengthIEEE Photonics Technology Letters, 1996
- Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfacesApplied Physics Letters, 1995
- Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1995
- Atomic Structure of the Interfaces Between Silicon Directly Bonded WafersMRS Proceedings, 1995
- Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangementApplied Physics Letters, 1993
- Electrical characteristics of directly-bonded GaAs and InPApplied Physics Letters, 1993
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990
- Grain boundary dislocation networks as electron diffraction gratingsPhilosophical Magazine, 1972