Rapid thermal annealing for 1-MeV arsenic-ion-implanted layers in silicon

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Abstract
Rapid thermal annealing (RTA) has been carried out by using a graphite strip heater for Si substrates which are implanted with As+ ions at an incident energy of 1 MeV to a high dose of 1×1015/cm2. Annealing characteristics for As-implanted Si substrates have been investigated by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties for the buried n-type layer formed in the substrate during RTA have been examined by differential Hall measurements. A comparison between the annealing process of RTA and that of furnace annealing is made. The experimental results obtained from this work show clearly that the growth of secondary defects in high-energy As+-implanted layers in Si can be effectively suppressed by the use of RTA at 1050 °C, which is not the case for furnace annealing under conventional conditions, e.g., at 1000 °C for 60 min. It has been also shown that a high electrical activation of implanted As atoms is achieved by RTA at 1050 °C, resulting in the formation of a buried n-type layer with a maximum carrier concentration of around 1.5×1019/cm3. Some anomalous electrical properties have been measured in the samples treated by RTA.

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