High-frequency submicrometer Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors

1 August 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 10 (8) , 391-393
https://doi.org/10.1109/55.31767

Abstract

The high speed scaling of an Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As submicrometer heterostructure bipolar transistor (HBT) is presented. Transistors with emitter dimensions of 0.5*11 and 3.5*3.5 mu m/sup 2/ exhibit unity current-gain cutoff frequencies of 63 and 70 GHz, respectively. Emitter current density greater than 3.3*10/sup 5/ A/cm/sup 2/ is demonstrated in a submicrometer AlInAs/InGaAs HBT. The analysis shows that the device speed is limited by the parasitic collector charging time.

Keywords

This publication has 8 references indexed in Scilit:

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