OMVPE of Gallium Arsenide Using an Adduct Compound
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L467-469
- https://doi.org/10.1143/jjap.23.l467
Abstract
Organometallic vapor phase epitaxial (OMVPE) growth of gallium arsenide was conducted by making use of the reaction between an adduct compound : trimethygallium triethylphosphine and arsine. Characteristics of this growth process and the grown crystals were described in terms of growth rate, surface morphology, carrier concentration, electron mobility and photoluminescence spectra at 4 K. The highest mobilities obtained so far were 7000 cm2/(Vs) at 300 K and 47000 cm2/(Vs) at 77 K. The lowest carrier concentration was 5×1014 cm-3.Keywords
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