Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy
- 1 February 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (2) , 137-141
- https://doi.org/10.1007/bf02655828
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structuresApplied Physics Letters, 1991
- InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasersApplied Physics Letters, 1991
- Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulatorApplied Physics Letters, 1990
- Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxyApplied Physics Letters, 1990
- High Resolution X-Ray Diffraction for the Characterization of Semiconducting MaterialsPublished by Springer Nature ,1990
- Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP HeterostructuresJournal of the Electrochemical Society, 1989
- Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurementsJournal of Vacuum Science & Technology B, 1986
- Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yJournal of Applied Physics, 1984
- Heteroepitaxial growth of high mobility InAsP from the vapor phaseApplied Physics Letters, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983