Strain Relief Mechanisms and Nature of Misfit Dislocations in GaAs/Si Heterostructures
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Generation of misfit dislocations in semiconductorsJournal of Applied Physics, 1987
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Molecular Dynamics Studies of Semiconductor Thin Films and InterfacesMRS Proceedings, 1987
- Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structuresApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Molecular beam epitaxy of GaAs and AlGaAs on SiApplied Physics Letters, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981