Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 556-560
- https://doi.org/10.1016/s0022-0248(00)00777-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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