Thermal emission rates and activation energies of electrons at tantalum centers in silicon
- 31 July 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (7) , 611-613
- https://doi.org/10.1016/0038-1101(76)90059-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Thermal emission and capture of electrons at sulfur centers in siliconSolid-State Electronics, 1971
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970