Simulation of reactive ion etching pattern transfer

Publisher Website
Google Scholar
Abstract
This paper describes a model that simulates etching profiles and process latitudes in glow‐discharge bombardment‐induced reactive‐etching processes. Numerical results are presented for the pattern‐transfer step in trilayer lithography, but this analysis is applicable to many other pattern‐transfer processes. The inputs to the interface‐evolution model described here are a kinetic model for the yield per incident energetic particle and a statistical mechanical model that relates the incident‐yield‐weighted angular distribution to the pressure, sheath thickness, and sheath voltage drop. The kinetic model is based on experimental evidence and assumes that the yield per bombarding particle is proportional to its energy. The resulting interface‐evolution equation is mathematically analogous to a free‐surface evolution equation in hydrodynamics. This convective partial differential equation is reduced to a coupled set of ordinary differential equations via the method of characteristics and solved numerically. More general energy‐dependent yields are easily incorporated in the present formulation, but angle‐dependent yields are more difficult and are not treated here. This model describes how shadowing of the surface being etched results in proximity effects in line etching and aspect‐ratio‐dependent etching rates in trench etching. Simulated profiles are compared to experimental trilayer etching profiles and qualitatively describe their shape and the trends that are observed as pressure or other processing parameters are varied. Simulations showing the effect of angular distributions, line proximity, and trench aspect ratio on process latitudes in trilayer lithography are presented and discussed.