27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 32 (9) , 1394-1401
- https://doi.org/10.1109/4.628748
Abstract
A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10-9) [including erbium doped fiber amplifiers (EDFA)Keywords
This publication has 16 references indexed in Scilit:
- Waveguide integrated 1.55 µm photodetectorwith 45 GHz bandwidthElectronics Letters, 1996
- Monolithic pin -HEMT 1.55 µm photoreceiveron InP with 27 GHz bandwidthElectronics Letters, 1996
- Design and realisation of waveguide integrated AlInAs/GaInAsHEMTsregrown by MBE for high bit rate optoelectronic receivers on InPElectronics Letters, 1996
- Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidthElectronics Letters, 1995
- 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applicationsIEEE Photonics Technology Letters, 1995
- 0–90 GHz InAlAs/InGaAs/InP HEMT distributedbaseband amplifier ICElectronics Letters, 1995
- An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiverIEEE Microwave and Guided Wave Letters, 1994
- Full-Wave Analysis of a Modified Coplanar Air Bridge T-JunctionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Receiver Design for Digital Fiber Optic Communication Systems, IBell System Technical Journal, 1973