Quadrupole interaction of125Te and129I in Te implanted semiconductors
- 1 June 1981
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 10 (1-4) , 973-977
- https://doi.org/10.1007/bf01022039
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Laser and thermal annealing of Te-implanted siliconPhysics Letters A, 1979
- On the Existence of a Quadrupole Interaction at57Fe Implanted in Si and GePhysica Status Solidi (b), 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Evidence of the electric quadrupole coupling of 57Fe implanted in siliconPhysics Letters A, 1977
- On the isomer shifts of129I impurities implanted in semiconductorsHyperfine Interactions, 1977
- A 125Te and 129I Mössbauer study of tellurium–selenium and tellurium–sulfur phasesThe Journal of Chemical Physics, 1977
- Mössbauer investigation ofin Te-thiourea compounds and the quadrupole moment of the first excited state ofPhysical Review B, 1977
- Mössbauer Studies of ImplantedIons in Semiconductors and Alkali HalidesPhysical Review B, 1973
- Lattice location and dopant behavior of group II and VI elements implanted in siliconSolid State Communications, 1970