Necessity of hydrogen for activation of implanted fluorine in Si/SiO2 structures
- 22 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (21) , 2949-2951
- https://doi.org/10.1063/1.110282
Abstract
The elimination of trapping centers in Al/SiO2/Si structures by means of fluorine ion implantation was studied in oxides with various contents of hydrogen. It was shown that significant reduction in the density of electron and hole traps in the bulk of oxide may be achieved only in the presence of hydrogen in the system (wet oxide, or post‐metallization anneal in a hydrogen containing ambient). Similarly, suppression of the generation of Si/SiO2 interface states by radiation is also observed only in hydrogen containing systems. The results suggest that defect precursors such as weakly bonded hydrogen and strained Si—O bonds are eliminated by the fluorine and that hydrogen is necessary for this elimination. It is proposed that H facilitates the F transport by formation of HF molecules.Keywords
This publication has 14 references indexed in Scilit:
- Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1993
- The Characteristics of Slow and Fast Interface States in Fluorinated Metal Oxide Semiconductor DevicesJournal of the Electrochemical Society, 1992
- Passivation of (111) Si/SiO2 interface by fluorineApplied Physics Letters, 1992
- Pre‐Oxidation Fluorine Implantation into Si: Process‐Related MOS CharacteristicsJournal of the Electrochemical Society, 1992
- Interface trap generation and electron trapping in fluorinated SiO2Applied Physics Letters, 1991
- Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3Applied Physics Letters, 1991
- Electron Trap Activation in Thermal SiO2Physica Status Solidi (a), 1990
- Dielectric characteristics of fluorinated ultradry SiO2Applied Physics Letters, 1989
- The effects of water on oxide and interface trapped charge generation in thermal SiO2 filmsJournal of Applied Physics, 1981
- Identification of electron traps in thermal silicon dioxide filmsApplied Physics Letters, 1981