High deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and “Hot-Wire” CVD techniques

This publication has 9 references indexed in Scilit:

• Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies
  Applied Physics Letters, 1997
• The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1996
• Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications
  MRS Proceedings, 1995
• Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD
  MRS Proceedings, 1995
• Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
  Applied Physics A, 1994
• Study of Deposition Process in Modulated RF Silane Plasma
  Japanese Journal of Applied Physics, 1994
• Capacitively coupled glow discharges at frequencies above 13.56 MHz
  Applied Physics Letters, 1991
• Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method
  Japanese Journal of Applied Physics, 1991
• High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
  Electronics Letters, 1987