Thermal Stability of Au-Sn/Near Noble Metal Barrier Metallization Systems
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6A) , L1056
- https://doi.org/10.1143/jjap.30.l1056
Abstract
We studied the reaction barrier characteriatics and thermal stability of evaporated Pd, Pt and Rh films when used with Au-Sn (30 wt% Sn). Sn in Au-Sn diffused preferentially into a barrier metal uniformly for all three metals. The diffusion coefficient was sufficiently small for Pt and Rh. Rh showed the samllest diffusion coefficient between 200°C and 400°C with the highest activation energy, 1.95 eV, below the melting point of Au-Sn (280°C). This result demonstrates the usefulness of Pt, and especially Rh, in highly stable metallization systems applicable to flip-chip integration.Keywords
This publication has 6 references indexed in Scilit:
- A novel flip-chip interconnection technique using solder bumps for high-speed photoreceiversJournal of Lightwave Technology, 1990
- Gainas pin photodiode/GaAs preamplifier photoreceiver for gigabit-rate communications systems using flip-chip bonding techniquesElectronics Letters, 1988
- Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systemsElectronics Letters, 1985
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- Some aspects of bonding-solder deterioration observed in long-lived semiconductor lasers: Solder migration and whisker growthJournal of Applied Physics, 1984
- Thin-film interdiffusion. II. Ti-Rh, Ti-Pt, Ti-Rh-Au, and Ti-Au-RhJournal of Applied Physics, 1975