An ultra high vacuum system for thin dielectric film deposition at low temperatures
- 1 October 1988
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 3 (5) , 951-957
- https://doi.org/10.1557/jmr.1988.0951
Abstract
An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both In P and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show much improved interfacial properties with little or no hysteresis.Keywords
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