Memory-window-size-temperature dependence of the metal-nitride-oxide-silicon (MNOS) structure
- 30 November 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11) , 1039-1043
- https://doi.org/10.1016/0038-1101(81)90131-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Endurance of thin-oxide nonvolatile MNOS memory transistorsIEEE Transactions on Electron Devices, 1977
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Discharge of MNOS structures at elevated temperaturesSolid-State Electronics, 1976
- Simple technique for determination of centroid of nitride charge in MNOS structuresApplied Physics Letters, 1975
- Electron and hole transport in CVD Si3N4 filmsApplied Physics Letters, 1975
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Discharge of MNOS structuresSolid-State Electronics, 1973
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966