Hydrogen Passivation and Reactivation of DX Centers in Se-Doped and Si-Doped AlGaAs - - A Comparison
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Thermal stability of dopant-hydrogen pairs in GaAsApplied Physics Letters, 1991
- Thermal dissociation energy of the Si-H complex in n-type GaAsApplied Physics Letters, 1991
- Negatively charged hydrogen species inn-type GaAsPhysical Review B, 1991
- Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type SiliconPublished by Elsevier ,1991
- Negative-charge state of hydrogen in siliconPhysical Review B, 1990
- Dissociation energies of shallow-acceptor-hydrogen pairs in siliconPhysical Review B, 1989
- Energetics ofDX-center formation in GaAs andAs alloysPhysical Review B, 1989
- Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si)Electronics Letters, 1987
- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986