Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 83-88
- https://doi.org/10.1016/0022-0248(91)90438-b
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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