Properties of metal-oxide-semiconductor structures with buried layers as deduced from nonequilibrium C(V) measurements

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Abstract
An n‐type buried channel in a p‐type metal‐oxide‐semiconductor ( p‐MOS) structure is created by phosphorus implantation. The 1‐MHz capacitance is measured at fast bias sweep rates so that nonequilibrium punchthrough occurs. The various portions of this curve are discussed. The depth of the p‐n space‐charge layer is increased with an external layer voltage, and so is the punchthrough depth. The variation of the punchthrough depth underneath the gate with the gate voltage is exploited for substrate doping profiling, so that a complete doping profile of the layer and the substrate up to a depth of ⩾3 μm is now available. The average generation rate in the depleted silicon is determined as a function of temperature and the activation energy of generation is determined to be 0.45 eV.