Electrical characterization of copper related defect reactions in silicon
- 1 February 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 58 (1-2) , 149-154
- https://doi.org/10.1016/s0921-5107(98)00287-6
Abstract
No abstract availableThis publication has 39 references indexed in Scilit:
- Interstitial copper-related center in n-type siliconApplied Physics Letters, 1997
- Defect reactions in copper-diffused and quenchedp-type siliconPhysical Review B, 1992
- Interaction between copper and point defects in proton-irradiated siliconJournal of Applied Physics, 1992
- Interaction of a Copper-Induced Defect with Shallow Acceptors and Deep Centers in SiliconMaterials Science Forum, 1992
- Silicide formation and the generation of point defects in siliconPhysical Review Letters, 1991
- Copper, lithium, and hydrogen passivation of boron inc-SiPhysical Review B, 1990
- Transition metal impurities in silicon: New defect reactionsApplied Physics A, 1989
- Ultrafast diffusion of a defect in indium-doped silicon introduced by chemomechanical polishingApplied Physics Letters, 1988
- Störstellenreaktionen bei Cu-dotierten SiliziumkristallenPhysica Status Solidi (a), 1986
- The electrical properties of deep copper- and nickel-related centers in siliconJournal of Applied Physics, 1983