Ar+ laser induced chemical vapor deposition of Si from SiH4
- 1 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (9) , 819-821
- https://doi.org/10.1063/1.93272
Abstract
For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4. With a laser irradiance of 3600 W/mm2 a deposition rate of 30 μm/s was obtained. The temperature dependence of the deposition rate was investigated. The kinetically controlled regime is characterized by an activation energy of 44±4 kcal/mole.Keywords
This publication has 10 references indexed in Scilit:
- Laser induced chemical vapor deposition of carbonApplied Physics Letters, 1981
- Temperature dependence of the reflectance of solid and liquid siliconJournal of Applied Physics, 1981
- Laser microphotochemistry for use in solid-state electronicsIEEE Journal of Quantum Electronics, 1980
- Laser-induced chemical vapor deposition of polycrystalline Si from SiCl4Applied Physics Letters, 1980
- Laser-induced vapor deposition of siliconApplied Physics Letters, 1979
- Chemical vapor deposition of silicon using a CO2 laserApplied Physics Letters, 1978
- On amorphous layer formation in silicon by ion implantationRadiation Effects, 1974
- The Role of Homogeneous Reactions in Chemical Vapor DepositionJournal of the Electrochemical Society, 1971
- The pyrolysis of monosilaneProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957