Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure

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Abstract
We present results of pressure-dependent photoluminescence(PL) studies of single-crystal Al x Ga 1−x N epitaxialfilmsgrown on sapphire substrates by metalorganic chemical vapor deposition.PL measurements were performed under hydrostaticpressure using the diamond-anvil-cell technique. PLspectra taken from the Al x Ga 1−x N epitaxialfilms are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of Al x Ga 1−x N were determined. Our results yield a pressure coefficient of 4.0×10 −3 eV/kbar for Al 0.05 Ga 0.95 N and 3.6×10 −3 eV/kbar for Al 0.35 Ga 0.65 N .