A slow positron beam study of vacancy formation in fluorine-implanted silicon
- 1 April 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (7) , 3242-3245
- https://doi.org/10.1063/1.352968
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Positron and electron backscattering from solidsPhysical Review Letters, 1992
- Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorptionPhysical Review B, 1991
- Median penetration depths and implantation profiles for low energy positrons in AlJournal of Physics: Condensed Matter, 1991
- Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Proved with Slow PositronsJapanese Journal of Applied Physics, 1990
- Positron trapping rates and their temperature dependencies in electron-irradiated siliconPhysical Review B, 1989
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Electron paramagnetic resonance of the lattice damage in oxygen-implanted siliconJournal of Applied Physics, 1972
- ELECTRON PARAMAGNETIC RESONANCE OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1970
- ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICONApplied Physics Letters, 1969