Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 318-325
- https://doi.org/10.1016/0022-0248(92)90478-2
Abstract
No abstract availableKeywords
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