Short-time failure of metal interconnect caused by current pulses
- 1 October 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (10) , 481-483
- https://doi.org/10.1109/55.244737
Abstract
It is pointed out that voltage programmable link (VPL) technologies impose a new criterion on the reliability of metal interconnect. Lines of metallization must support the full programming current, which can be many times larger than the signal level current, for very short periods of time. For a sufficiently short high-current pulse, the wire, encapsulated in oxide, will not reach thermal equilibrium and the current-induced heating can be modeled as being adiabatic. Energy conservation predicts a relationship between maximum current density that can be carried by a wire before it fuses, and the pulse duration time, J/sup 2/t=10/sup 8/ A/sup 2/-s/cm/sup 4/. This relationship is based on a temperature rise in the metal line at failure of theta /sub f/*=300 degrees C. The time required for the metal to reach thermal equilibrium at a given current density is shown to be proportional to the square of the oxide thickness. These predictions are experimentally verified with layered AlSi/Ti metallization on thermal oxide on silicon substrates.Keywords
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