4H-SiC MESFETs behavior after high dose irradiation
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (3) , 598-603
- https://doi.org/10.1109/23.856486
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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