Property-composition relationships in sputter-deposited a-Si:H alloys
- 31 March 1980
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 2 (2) , 143-157
- https://doi.org/10.1016/0165-1633(79)90014-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Silicon nitride films prepared by reactive plasma sputteringThin Solid Films, 1978
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin filmJournal of Physics E: Scientific Instruments, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- Properties of amorphous silicon films— Dependence on deposition conditionsJournal of Non-Crystalline Solids, 1975
- Measurement of High Resistivity Semiconductors Using the van der Pauw MethodReview of Scientific Instruments, 1973
- Optical and Electrical Properties and Band Structure of GeTe and SnTePhysical Review B, 1968
- Some New Three Level Designs for the Study of Quantitative VariablesTechnometrics, 1960