EBIC defect characterisation: state of understanding and problems of interpretation
- 1 December 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 42 (1-3) , 8-13
- https://doi.org/10.1016/s0921-5107(96)01677-7
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination levelJournal of Applied Physics, 1995
- Analysis of recombination activity of NiSi2 platelets in SiPhysica Status Solidi (a), 1995
- On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigationsPhysica Status Solidi (a), 1993
- Local investigation of recombination at grain boundaries in silicon by grain boundary-electron beam induced currentJournal of Applied Physics, 1993
- The Maximum Charge-Collection Contrast of a Spherical Defect or a Surface-Parallel DislocationPhysica Status Solidi (a), 1993
- A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activitySemiconductor Science and Technology, 1992
- On the characterization of individual defects in silicon by EBICCrystal Research and Technology, 1981
- The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type siliconPhysica Status Solidi (a), 1979
- The effects of contamination on the electrical properties of edge dislocations in siliconPhilosophical Magazine, 1968
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952