In situ and ex situ investigation of ion-beam-induced amorphization in α-SiC
- 19 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 191-194
- https://doi.org/10.1016/s0168-583x(96)00883-x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- The irradiation-induced crystalline-to-amorphous phase transition in α-SiCNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- High temperature ion implantation of silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Defect production and annealing in ion implanted silicon carbideMaterials Science and Engineering: B, 1995
- Ion implantation effects in silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Microstructural characterization of iron ion implantation of silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Damage and aluminum distributions in sic during ion implantation and annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- A Rutherford backscattering study of Ar- and Xe-implanted silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- The hardness and elastic modulus of chromium-implanted silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Mechanical property changes in sapphire by nickel ion implantation and their dependence on implantation temperatureJournal of Materials Science, 1986
- Disorder produced in SiC by ion bombardmentRadiation Effects, 1971