Low-temperature ferromagnetism in (Ga, Mn)N: Ab initiocalculations
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- 3 November 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 70 (20) , 201202
- https://doi.org/10.1103/physrevb.70.201202
Abstract
The magnetic properties of dilute magnetic semiconductors (DMSs) are calculated from first-principles by mapping the ab initio results on a classical Heisenberg model. By using the Korringa–Kohn–Rostoker coherent-potential approximation (KKR-CPA) method within the local-density approximation, the electronic structure of (Ga, Mn)N and (Ga, Mn)As is calculated. Effective exchange coupling constants ’s are determined by embedding two Mn impurities at sites and in the CPA medium and using the formula of Liechtenstein et al. [J. Magn. Magn. Mater. 67, 65 (1987)]. It is found that the range of the exchange interaction in (Ga, Mn)N, being dominated by the double exchange mechanism, is very short ranged due to the exponential decay of the impurity wave function in the gap. On the other hand, in (Ga, Mn)As, where exchange mechanism dominates, the interaction range is weaker but long ranged, because the extended valence hole states mediate the ferromagnetic interaction. Curie temperatures (’s) of DMSs are calculated by using the mean-field approximation (MFA), the random-phase approximation, and the, in principle exact, Monte Carlo method. It is found that the values of (Ga, Mn)N are very low since, due to the short-ranged interaction, percolation of the ferromagnetic coupling is difficult to achieve for small concentrations. The MFA strongly overestimates . Even in (Ga, Mn)As, where the exchange interaction is longer ranged, the percolation effect is still important and the MFA overestimates by about 50%–100%.
Keywords
This publication has 29 references indexed in Scilit:
- Room-Temperature Ferromagnetism in a II-VI Diluted Magnetic SemiconductorPhysical Review Letters, 2003
- Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayersApplied Physics Letters, 2003
- High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealingApplied Physics Letters, 2002
- Curie temperature trends in (III,Mn)V ferromagnetic semiconductorsPhysical Review B, 2002
- First principles materials design for semiconductor spintronicsSemiconductor Science and Technology, 2002
- Ferromagnetic semiconductorsSemiconductor Science and Technology, 2002
- Room temperature ferromagnetic properties of (Ga, Mn)NApplied Physics Letters, 2001
- Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnNApplied Physics Letters, 2001
- Magnetic and structural properties of Mn-implanted GaNApplied Physics Letters, 2001
- Material Design of GaN-Based Ferromagnetic Diluted Magnetic SemiconductorsJapanese Journal of Applied Physics, 2001