Design considerations for integrated high-frequency p-channel JFETs
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11) , 1924-1934
- https://doi.org/10.1109/16.7406
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characteristics of separated-gate JFETsElectronics Letters, 1986
- A high-frequency bipolar JFET I2L processIEEE Transactions on Electron Devices, 1982
- A new method for realizing JFETs and super B's in a standard bipolar IC processIEEE Journal of Solid-State Circuits, 1982
- JFET's fabricated in a standard IC process for bipolar transistorsIEEE Journal of Solid-State Circuits, 1978
- A fast algorithm for the calculation of junction capacitance and its application for impurity profile determinationSolid-State Electronics, 1972
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Analysis of field effect transistors with arbitrary charge distributionIEEE Transactions on Electron Devices, 1963