Insulating gate InGaAs/InP field-effect transistors
- 19 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2534-2536
- https://doi.org/10.1063/1.100200
Abstract
Depletion mode heterostructure transistors with InGaAs channel have been fabricated by depositing the gate metallization directly on a semi-insulating Fe:InP layer grown by metalorganic chemical vapor epitaxy. The quantum well channel layer, as thin as 100 Å, shows high electron mobility of 8000 V/cm2 s at room temperature and up to 55 000 V/cm2 s at 77 K. The enhanced gate breakdown voltage results in 1 μm gate devices with transconductance of 210 mS/mm and a complete pinch-off at a low gate bias of −0.1 V. Preliminary high-frequency measurements are also discussed.Keywords
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