Design for e-beam testability — A demand for e-beam testing of future device generations ?
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 7 (2-4) , 405-415
- https://doi.org/10.1016/s0167-9317(87)80037-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Microfields in stroboscopic voltage measurements via electron emission. I. Response function of the potential energyJournal of Applied Physics, 1987
- Electron beam probing system with ultrahigh time resolutionJournal of Vacuum Science & Technology B, 1987
- Some aspects concerning design for e-beam testabilityMicroelectronic Engineering, 1986
- Extraction field and oxide charging in voltage contrast systemsScanning, 1985
- Ultra-large scale integrationIEEE Transactions on Electron Devices, 1984
- In-the-lens secondary electron analyser for IC internal voltage measurements with electron beamsElectronics Letters, 1984
- Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET'sIEEE Transactions on Electron Devices, 1980