Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (8) , 829-831
- https://doi.org/10.1109/68.149877
Abstract
Preliminary reliability studies of strained In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers operating at 0.81 mu m are reported. InAlGaAs lasers, a possible replacement for AlGaAs lasers, have been studied with respect to three failure mechanisms. Uncoated In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers have exhibited catastrophic optical damage limits of 1.87 MW/cm/sup 2/, which is equal to that of similar AlGaAs lasers. Further, the lasers are both free of DLD-induced sudden failures and exhibit low degradation rates even in this early stage of their development.Keywords
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