New and simple optical method for i n s i t u etch rate determination and endpoint detection
- 2 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14) , 1474-1476
- https://doi.org/10.1063/1.102301
Abstract
Optical emission spectroscopy has been established as a simple method for simultaneous etch rate determination and endpoint detection in ion beam etching. During the sputtering of a thin layer with a refractive index different from the substrate interference is detected in the reflected light emitted by excited beam particles. This method will be very useful for other plasma and beam-assisted processes too, like deposition, reactive ion etching, and reactive ion beam etching. In contrast to the conventional methods, no additional light source is required.Keywords
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